TQP7M9103

TQP7M910x High Linearity Amplifiers

Qorvo TQP7M910x High Linearity Amplifiers are Indium Gallium Phosphide (InGaP) / Gallium arsenide (GaAs) Heterojunction Bipolar Transistors (HBTs) that deliver high performance across a broad range of frequencies. The TQP7M910x Amplifiers integrate on-chip DC over-voltage and RF over-drive protection. This protects the amplifier from electrical DC voltage surges and high input RF input power levels that may occur in a system. On-chip ESD protection allows the amplifier to have a very robust Class 2 HBM ESD rating. The TQP7M910x Amplifiers are targeted for use as driver amplifiers in wireless infrastructure where high linearity, medium power, and high efficiency are required. These device are an excellent candidate for transceiver line cards and high power amplifiers in current and next generation multicarrier 3G / 4G base stations.