Full Podcast (25:00mins)
Introduction (01:00mins)
Condensed Podcast (09:13mins)
Join us in our product technology conversation with Steven Shackell of ON Semiconductor as we discuss the evolution in power management.
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Raymond Yin
Director of Technical Content, Mouser Electronics
Steven Shackell
ON Semiconductor
Image courtesy of Infineon.
Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. Infineon’s trench MOS technology is leading the way in power management.
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The bandgap is the region between the valence band and the conduction band in an atom. The wider it is, the more energy it takes to push an electron into the conduction band.
The category of electronic materials in which the bandgap energy exceeds approximately 2 electronvolts (eV).
Conventional semiconductors are made of
Most wide bandgap semiconductors (WBGSs) are made of
Silicon carbide
3.3 eV
SiC is the most maturely developed of the wide bandgap (WBG) materials
Gallium nitride
3.4 eV
GaN is used in lower voltage (<=650V) and high switching frequency applications
WBG semiconductors allow for higher
Efficiency
Switching Frequencies
Operating Temperatures
Breakdown Voltages
WBGSs are used in the traction inverter and for Level 3 charging of electric vehicles.
With WBGSs energy conversion efficiency increases by around 85%.
WBGSs contribute to more efficient power in railway systems, manufacturing, power plants and more.
WBGSs can also be used in radio frequency (RF) signal processing, and switching is faster and more high-power.
SiC and GaN are inherently radiation hardened (rad-hard) and have high-temperature operating capabilities, making them suitable for aerospace applications.
Wolfspeed silicon carbide and GaN on SiC devices outperform conventional silicon components and set new standards for efficiency and reliability in industrial, energy, automotive, aerospace, defense, cellular infrastructure, and consumer markets.
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