IRF40B207 Single N-Channel HEXFET™ Power MOSFET

Infineon IRF40B207 Single N-Channel HEXFET™ Power MOSFET has enhanced body diode dV/dt and dl/dt capability. This MOSFET features improved gate, avalanche, and dynamic dV/dt ruggedness. The typical static drain-to-source on-resistance of this MOSFET is 3.6mΩ. This power MOSFET is RoHS compliant and also features fully characterized capacitance, and avalanche Safe Operating Area (SOA). Applications include brushed and BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, power supplies, and power switches. IRF40B207 is free from lead and halogen and is available in a TO-220AB package.