S25FL512S FL-S NOR Flash Memory Devices

Infineon Technologies S25FL512S FL-S NOR Flash Memory Devices are V_IO V_CC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI programs or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single-bit serial input and output. Optional two-bit (Dual I/O or DIO) and four-bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer addresses.