650V IH Series IGBTs

STMicroelectronics 650V IH Series IGBTs offer high efficiency for induction heating systems and soft switching applications. The STMicroelectronics IGBTs belong to the STPOWER™ family that exceeds the HB series, currently used for induction heating applications. The 650V IH series ensures increased efficiency in final applications thanks to a lower VCE(sat)  combined with very low turn-off energy. 40A and 50A devices are already available in TO-247 Long Leads packages, and 20A and 30A devices are being developed.

Résultats: 10
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Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité.
Qté. RoHS Modèle de ECAO Technologie
Package/Boîte
Style de montage
Configuration
Collecteur - Tension de l'émetteur VCEO max.
Tension de saturation collecteur-émetteur
Tension de l'émetteur de porte max.
Courant collecteur continu de 25 C
Pd - Dissipation d’énergie
Température de fonctionnement min.
Température de fonctionnement max.
Série
Qualification
Conditionnement
STMicroelectronics IGBTs Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 lo
Fiche technique
983En stock
Min. : 1
Mult. : 1

Si TO-247-3 Through Hole Single 650 V 1.5 V - 20 V, 20 V 100 A 300 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBTs Trench gate field-stop 1350 V, 35 A, soft-switching IH2 series IGBT
Fiche technique
487En stock
60030/07/2027 attendu
Min. : 1
Mult. : 1

Tube
STMicroelectronics IGBTs Trench gate field-stop 1350 V, 25 A, soft-switching IH2 series IGBT
Fiche technique
545En stock
Min. : 1
Mult. : 1

Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long
Fiche technique
294En stock
60012/02/2027 attendu
Min. : 1
Mult. : 1

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 86 A 272 W - 55 C + 175 C HB2 Tube

STMicroelectronics IGBTs Trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads
Fiche technique
390En stock
Min. : 1
Mult. : 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBTs Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT
Fiche technique
14En stock
Min. : 1
Mult. : 1

- 20 V, 20 V HB2 AEC-Q100 Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 pa
Fiche technique
42En stock
Min. : 1
Mult. : 1

Si TO-247-4 Through Hole Single 650 V 1.55 V - 20 V, 20 V 145 A 441 W - 55 C + 150 C HB2 Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 20 A, high speed HB2 series IGBT in a TO-247 long
Fiche technique
493En stock
Min. : 1
Mult. : 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 40 A 147 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO-247 lo
Fiche technique
Délai de livraison 22 Semaines
Min. : 1
Mult. : 1

Si TO-247-3 Through Hole Single 650 V 1.5 V - 20 V, 20 V 80 A 238 W - 55 C + 175 C STGWA40IH65DF Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 20 A low-loss M series IGBT in a TO-247 long lead
Fiche technique
Délai de livraison produit non stocké 14 Semaines
Min. : 600
Mult. : 600

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 40 A 166 W - 55 C + 175 C HB2 Tube