1200V Gen-3 Fast (G3F) SiC MOSFETs

GeneSiC Semiconductor 1200V Gen-3 Fast (G3F) SiC MOSFETs enable 22kW, 800V bi-directional on-board chargers for Electric Vehicles (EVs). These MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology, delivering high-speed performance. The 1200V SiC MOSFETs include 100%-tested avalanche capability, 30% longer short-circuit withstand time, and tight threshold voltage distributions for easy paralleling. These MOSFETs offer a low RDS(ON), superior power density, and cool-running performance. The 1200V SiC MOSFETs achieve up to 95.5% peak efficiency in EV charging and power conversion systems. These MOSFETs are ideal for applications, including EVs and DC-DC converters.

Résultats: 15
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Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité.
Qté. RoHS Modèle de ECAO Style de montage
Package/Boîte
Polarité du transistor
Nombre de canaux
Vds - Tension de rupture drain-source
Id - Courant continu de fuite
Rds On - Résistance drain-source
Mode canal
GeneSiC Semiconductor SiC MOSFET 1200V 18mohm TO-263-7 G3F SiC MOSFET 753En stock
Min. : 1
Mult. : 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 34mohm TO-263-7 G3F SiC MOSFET 1 547En stock
Min. : 1
Mult. : 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 40mohm TO-247-4 G3F SiC MOSFET 1 562En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 61 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 135mohm TO-263-7 G3F SiC MOSFET 1 495En stock
Min. : 1
Mult. : 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 135 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 18mohm TO-247-4 G3F SiC MOSFET
Fiche technique
428En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 20mohm TO-247-4 G3F SiC MOSFET 536En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 109 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 25mohm TO-263-7 G3F SiC MOSFET 257En stock
Min. : 1
Mult. : 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 25mohm TO-247-4 G3F SiC MOSFET 247En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 34mohm TO-247-4 G3F SiC MOSFET 456En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 40mohm TO-263-7 G3F SiC MOSFET 761En stock
Min. : 1
Mult. : 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 68 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 65mohm TO-263-7 G3F SiC MOSFET
Fiche technique
1 560En stock
Min. : 1
Mult. : 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 65 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 65mohm TO-247-4 G3F SiC MOSFET 473En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 65 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 75mohm TO-263-7 G3F SiC MOSFET 572En stock
Min. : 1
Mult. : 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 39 A 75 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 75mohm TO-247-4 G3F SiC MOSFET 1 685En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 35 A 75 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 20mohm TO-263-7 G3F SiC MOSFET 40En stock
80031/08/2026 attendu
Min. : 1
Mult. : 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 123 A 20 mOhms Enhancement