IXYS Power MOSFET
IXYS Power MOSFET is designed for RF applications below 100MHz, linear applications, and high-power, high-frequency, and high-speed switching applications. This Power MOSFET is available in a TO-247-3 package style for a broad spectrum of market needs, electrical design requirements, and mechanical and mounting specifications.
Features
- Optimized for RF and high-speed switching
- High power density
- Easy to mount, no insulators are needed
- Excellent thermal transfer
- -55°C to +175°C operating temperature range
- 18A current
- 530mΩ RDSON
- Operating mode options
- Switching
- Linear
Additional Resources
Associated Products
IXYS SiC (Silicon Carbide) Diodes & Rectifiers
Extremely fast switching devices with zero recovery and temperature independent behavior.
Publié le: 2017-10-13
| Mis à jour le: 2022-03-31