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S25FL128SDSMFBG13

Name: Infineon S25FL128SDSMFBG13
Brand: Infineon Technologies
SKU: 727-S25FL128SDSMFB13
Price: 3.47 EUR
Availability: OutOfStock

N° Mouser :

727-S25FL128SDSMFB13

N° de fab. :

S25FL128SDSMFBG13

Fab. :

Infineon Technologies

Description :

Flash NOR Nor

Fiche technique:

S25FL128SDSMFBG13 Fiche technique (PDF)

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Plus d'informations

En savoir plus à propos de Infineon Technologies S25FL128SDSMFBG13

Disponibilité

Stock:: Non stocké

Une erreur inattendue est survenue. Veuillez réessayer ultérieurement.
Délai usine :: 16 Semaines Délai de production estimé en usine.

Entrez la quantité:

Minimum : 1450 Multiples : 1450

Prix unitaire:

-,-- €

Ext. Prix:

-,-- €

Tarif est.:

Ce produit est expédié GRATUITEMENT

Prix (EUR)

Qté.	Prix unitaire	Ext. Prix
Bobine complète(s) (commandez en multiples de 1450)
	3,47 €	5 031,50 €
	3,39 €	9 831,00 €

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Attribut de produit	Valeur d'attribut	Sélectionner l'attribut
Fabricant:	Infineon
Catégorie du produit:	Flash NOR
RoHS:
Série:	S25FL128S
Type de chronométrage:	Synchronous
Température de fonctionnement min.:	- 40 C
Température de fonctionnement max.:	+ 105 C
Qualification:	AEC-Q100
Conditionnement:	Reel
Marque:	Infineon Technologies
Sensibles à l’humidité:	Yes
Type de produit:	NOR Flash
Nombre de pièces de l'usine:	1450
Sous-catégorie:	Memory & Data Storage
Nom commercial:	MirrorBit
Poids de l''unité:	8,311 g

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Attributs sélectionnés: 0

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Fiche technique

S25FL128SDSMFBG13 Fiche technique (PDF)

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Codes de conformité

TARIC:: 8542326100
CNHTS:: 8542320000
CAHTS:: 8542320040
USHTS:: 8542320051
MXHTS:: 8542320201
ECCN:: 3A991.b.1.a

Classifications d’origine

Pays d'origine:: Non disponible
Pays d'origine de l'assemblage:: Taïwan
Pays de diffusion:: États-Unis

Le pays est susceptible de changer au moment de l’expédition.

S25FL128S NOR Flash Memory Devices

Infineon Technologies S25FL128S FL-S NOR Flash Memory Devices are a 2.7V to 3.6V / 1.65V to 3.6V VIO Volt non-volatile memory using 65nm MIRRORBIT™ technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single-bit serial input and output (Single I/O or SIO), optional two-bit (Dual I/O or DIO), and four-bit (Quad I/O or QIO) serial commands.

S25FL MIRRORBIT™ Flash Non-Volatile Memory

Infineon Technologies S25FL128S/S25FL256S MIRRORBIT™ Flash Non-Volatile Memory devices employ MIRRORBIT technology that stores two data bits in each memory array transistor. These Infineon devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. Infineon S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.

Automotive Solutions

Infineon Technologies Automotive Solutions are an AEC-Q100 qualified portfolio that consists of high-quality products with a strict zero-defect policy in manufacturing and testing. MCU, NOR, RAM, and PMIC parts ensure quality and support for cluster, body electronics, HMI, and high-performance storage solutions.

S25 MIRRORBIT™ Flash Non-Volatile Memory

Infineon Technologies S25 MIRRORBIT™ Flash Non-Volatile Memory uses MIRRORBIT technology, which stores two data bits in each memory array transistor; Eclipse architecture dramatically improves program and erase performance; and 65nm process lithography. This family of devices connect to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. In addition, the FL-S family adds support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Infineon S25 MIRRORBIT Flash Non-Volatile Memory is ideal for code shadowing, XIP, and data storage.

S25FLxS FL-S NOR Flash Memory Devices

Infineon Technologies S25FLxS FL-S NOR Flash Memory Devices are 2.7V to 3.6V or 1.65V to 3.6V V_IO Volt Non-volatile Memory. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MIRRORBIT™ technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in more effective programming and erasing than prior generation SPI programs or erased algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.

FL Serial NOR Flash Memory

Infineon Technologies FL Serial NOR Flash Memory offers a reduced pin count while providing optimal read/write performance. This feature makes the FL Serial NOR Flash Memory optimal for automotive, networking, consumer electronics, and industrial applications. An AEC-Q100 qualification and PPAP support are available for automotive customers. The Infineon FL family has four product groups: FL-S, FL-L, FL1-K, and FL-P.