RN2310,LF
Voir les caractéristiques du produit
Fab. :
Description :
Transistors numériques USM PLN TRANSISTOR Pd 100mW F 200Mhz
Disponibilité
-
Stock:
-
Non stockéUne erreur inattendue est survenue. Veuillez réessayer ultérieurement.
-
Délai usine :
Prix (EUR)
| Qté. | Prix unitaire |
Ext. Prix
|
|---|---|---|
| Ruban à découper / MouseReel™ | ||
| 0,146 € | 0,15 € | |
| 0,088 € | 0,88 € | |
| 0,054 € | 5,40 € | |
| 0,04 € | 20,00 € | |
| 0,034 € | 34,00 € | |
| Bobine complète(s) (commandez en multiples de 3000) | ||
| 0,028 € | 84,00 € | |
| 0,025 € | 150,00 € | |
| 0,021 € | 189,00 € | |
| 0,019 € | 456,00 € | |
Fiche technique
Application Notes
- Application Note
- Application Note
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Surface Mount Small Signal Transistor (BJT) Precautions for use
Models
Product Catalogs
Test/Quality Data
- TARIC:
- 8541210000
- CNHTS:
- 8541210000
- CAHTS:
- 8541210000
- USHTS:
- 8541210075
- JPHTS:
- 8541210101
- KRHTS:
- 8541219000
- MXHTS:
- 85412101
- ECCN:
- EAR99
- Pays d'origine:
- Thaïlande
- Pays d'origine de l'assemblage:
- Non disponible
- Pays de diffusion:
- Non disponible
France

Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2