Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

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Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité.
Qté. RoHS Type de produit
Technologie
Style de montage
Package/Boîte
ROHM Semiconductor Modules MOSFET Mod: 1200V 120A (w/ Diode)
Fiche technique
11En stock
Min. : 1
Mult. : 1

MOSFET Modules SiC Screw Mount Module
ROHM Semiconductor SiC MOSFET 650V 30A 134W SIC 80mOhm TO-247N
Fiche technique
Commentaire Produit
376En stock
Min. : 1
Mult. : 1

SiC MOSFETS SiC Through Hole TO-247N-3
ROHM Semiconductor SiC MOSFET TO247 650V 70A N-CH SIC
Fiche technique
235En stock
Min. : 1
Mult. : 1

SiC MOSFETS SiC Through Hole TO-247-4
ROHM Semiconductor SiC MOSFET TO247 650V 39A N-CH SIC
Fiche technique
714En stock
Min. : 1
Mult. : 1

SiC MOSFETS SiC Through Hole TO-247-4
ROHM Semiconductor SiC MOSFET 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver
Fiche technique
529En stock
Min. : 1
Mult. : 1

SiC MOSFETS SiC Through Hole TO-247-4
ROHM Semiconductor SiC MOSFET TO247 1.2KV 55A N-CH SIC
Fiche technique
61En stock
Min. : 1
Mult. : 1

SiC MOSFETS SiC Through Hole TO-247-4
ROHM Semiconductor Modules MOSFET SIC Pwr Module Half Bridge
Fiche technique
4En stock
Min. : 1
Mult. : 1

MOSFET Modules SiC Screw Mount Module
ROHM Semiconductor Diodes Schottky SiC SiC Schottky Barrier Diode, 650V, 8A, 2nd Gen
Fiche technique
1 701En stock
Min. : 1
Mult. : 1

SiC Schottky Diodes Through Hole TO-220ACG-2
ROHM Semiconductor SiC MOSFET 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver
Fiche technique
87En stock
Min. : 1
Mult. : 1

SiC MOSFETS SiC Through Hole TO-247-4
ROHM Semiconductor SiC MOSFET TO247 1.2KV 31A N-CH SIC
Fiche technique
147En stock
Min. : 1
Mult. : 1

SiC MOSFETS SiC Through Hole TO-247-4
ROHM Semiconductor Diodes Schottky SiC RECT 1.2KV 10A RDL SIC SKY
Fiche technique
752En stock
Min. : 1
Mult. : 1

SiC Schottky Diodes Through Hole TO-220ACG-2
ROHM Semiconductor Diodes Schottky SiC RECT 1.2KV 20A RDL SIC SKY
Fiche technique
1 391En stock
Min. : 1
Mult. : 1

SiC Schottky Diodes Through Hole TO-220ACG-2
ROHM Semiconductor SiC MOSFET 1200V 40A 262W SIC 80mOhm TO-247N
Fiche technique
Commentaire Produit
117En stock
Min. : 1
Mult. : 1

SiC MOSFETS SiC Through Hole TO-247-3
ROHM Semiconductor SiC MOSFET Nch 1200V 95A SiC TO-247N
Fiche technique
66En stock
45012/08/2026 attendu
Min. : 1
Mult. : 1

SiC MOSFETS SiC Through Hole TO-247N-3
ROHM Semiconductor SiC MOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS
Fiche technique
102En stock
Min. : 1
Mult. : 1
SiC MOSFETS SiC Through Hole TO-247-3
ROHM Semiconductor SiC MOSFET N-Ch 1200V SiC 55A 40mOhm TrenchMOS
Fiche technique
322En stock
Min. : 1
Mult. : 1

SiC MOSFETS SiC Through Hole TO-247-3
ROHM Semiconductor SiC MOSFET N-Ch 650V SiC 39A 60mOhm TrenchMOS
Fiche technique
839En stock
Min. : 1
Mult. : 1
SiC MOSFETS SiC Through Hole TO-247-3
ROHM Semiconductor Diodes Schottky SiC SiC, SBD 650V 15A D2PAK
Fiche technique
46En stock
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 1 000

SiC Schottky Diodes SMD/SMT TO-263AB-3
ROHM Semiconductor SiC MOSFET N-Ch 650V SiC 93A 22mOhm TrenchMOS
Fiche technique
5En stock
45012/03/2026 attendu
Min. : 1
Mult. : 1

SiC MOSFETS SiC Through Hole TO-247-3
ROHM Semiconductor SiC MOSFET N-Ch 650V SiC 21A 120mOhm TrenchMOS
Fiche technique
92En stock
45020/05/2026 attendu
Min. : 1
Mult. : 1
SiC MOSFETS SiC Through Hole TO-247-3
ROHM Semiconductor SiC MOSFET N-Ch 1200V SiC 17A 160mOhm TrenchMOS
Fiche technique
24En stock
1 350Sur commande
Min. : 1
Mult. : 1

SiC MOSFETS SiC Through Hole TO-247-3
ROHM Semiconductor Diodes Schottky SiC SiC Schottky Barrier Diode, 650V, 10A, 2nd Gen
Fiche technique
770En stock
Min. : 1
Mult. : 1

SiC Schottky Diodes Through Hole TO-220ACG-2
ROHM Semiconductor Diodes Schottky SiC SiC Schottky Barrier Diode, 650V, 12A, 2nd Gen
Fiche technique
830En stock
Min. : 1
Mult. : 1

SiC Schottky Diodes Through Hole TO-220ACG-2
ROHM Semiconductor Diodes Schottky SiC SiC Schottky Barrier Diode, 650V, 20A, 2nd Gen
Fiche technique
11En stock
Min. : 1
Mult. : 1

SiC Schottky Diodes Through Hole TO-220ACG-2
ROHM Semiconductor SiC MOSFET RECT 1.2KV 40A RDL SIC SKY
Fiche technique
785Sur commande
Min. : 1
Mult. : 1

SiC MOSFETS SiC Through Hole TO-247N-3