UJ3N Normally-On JFET Transistors

onsemi UJ3N JFET Transistors are high-performance, SiC Normally-On Junction Gate Field-Effect Transistors with options ranging from 650V to 1700V. This series exhibits ultra-low on resistance (RDS(ON)), as low as 25mΩ, and low gate charge (QG), allowing for low conduction and reduced switching loss. The device's normally-on characteristics with low RDS(ON) at VGS = 0V are also ideal for current protection circuits without the need for active control. The UJ3N JFET transistors are also commonly used in series connection with a Si-MOSFET as robust "Supercascodes," giving all of the advantages of wide band-gap technology with very high operating voltages and easy gate drive.

Résultats: 5
Sélectionner Image Référence Fab. Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité. Qté. RoHS Modèle de ECAO Technologie Style de montage Package/Boîte Polarité du transistor Configuration Vds - Tension de rupture drain-source Vgs - Tension de rupture grille-source Courant drain/source à Vgs=0 Id - Courant continu de fuite Rds On - Résistance drain-source Pd - Dissipation d’énergie Température de fonctionnement min. Température de fonctionnement max. Série Qualification Conditionnement
onsemi JFET 1200V/35MOSICJFETG3TO 563En stock
Min. : 1
Mult. : 1

SiC Through Hole TO-247-3 N-Channel Single 1.2 kV 20 V 63 A 35 mOhms 429 W - 55 C + 175 C UJ3N AEC-Q101 Tube
onsemi JFET 650V/25MOSICJFETG3TO2 250En stock
Min. : 1
Mult. : 1

SiC Through Hole TO-247-3 N-Channel Single 650 V 20 V 85 A 25 mOhms 441 W - 55 C + 175 C UJ3N AEC-Q101 Tube
onsemi JFET 650V/80MOSICJFETG3TO2 426En stock
Min. : 1
Mult. : 1
Max. : 20

SiC Through Hole TO-247-3 N-Channel Single 650 V 20 V 32 A 80 mOhms 190 W - 55 C + 175 C UJ3N AEC-Q101 Tube
onsemi JFET 1200V/65MOSICJFETG3TO 428En stock
Min. : 1
Mult. : 1

SiC Through Hole TO-247-3 N-Channel Single 1.2 kV - 20 V to 3 V 5 uA 34 A 90 mOhms 254 W - 55 C + 175 C UJ3N AEC-Q101 Tube
onsemi JFET 1200V/70MOSICJFETG3TO 434En stock
Min. : 1
Mult. : 1

SiC Through Hole TO-247-3 N-Channel Single 1.2 kV 20 V 33.5 A 70 mOhms 254 W - 55 C + 175 C UJ3N AEC-Q101 Tube