Silicon Carbide Schottky Barrier Diodes

Sanan Semiconductor Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs) are developed using Sanan’s advanced 3rd generation SiC SBD technology with high performance and reliability. These SBDs register higher efficiency, higher operation temperatures, and lower losses and operate at higher frequencies than Si-based solutions. The Schottky structure shows no recovery at turn-off and allows a low leakage current with a reverse voltage of up to 1200V. It can contribute to system miniaturization and achieve lightweight system design. Using RoHS-compliant components, the Sanan Semiconductor SiC SBDs are qualified for industrial applications.

Résultats: 48
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Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité.
Qté. RoHS Modèle de ECAO Style de montage
Package/Boîte
Configuration
If - Courant direct
Vrrm - Tension inverse répétitive
Vf - Tension directe
Ifsm - Courant de surtension direct
Ir - Courant inverse
Température de fonctionnement min.
Température de fonctionnement max.
Conditionnement
Sanan Semiconductor Diodes Schottky SiC 650V 10A, TO220-2L, Industrial Grade
Fiche technique
Non stocké
Min. : 1 000
Mult. : 50

Through Hole TO-220-2L Single 10 A 650 V 1.3 V 80 A 30 uA - 55 C + 175 C Tube
Sanan Semiconductor Diodes Schottky SiC 650V 10A, TO252-2L, Industrial Grade
Fiche technique
Non stocké
Min. : 800
Mult. : 800
Bobine: 800

Through Hole TO-252-2L Single 10 A 650 V 1.3 V 74 A 41 uA - 55 C + 175 C Reel
Sanan Semiconductor Diodes Schottky SiC 650V 10A, TO263-2L, Industrial Grade
Fiche technique
Non stocké
Min. : 800
Mult. : 800
Bobine: 800

Through Hole TO 263-2L Single 10 A 650 V 1.3 V 80 A 30 uA - 55 C + 175 C Reel
Sanan Semiconductor Diodes Schottky SiC 650V 10A, TO220N-2L, Industrial Grade
Fiche technique
Non stocké
Min. : 1 000
Mult. : 50

Through Hole TO-220-2L Single 10 A 650 V 1.3 V 80 A 30 uA - 55 C + 175 C Tube
Sanan Semiconductor Diodes Schottky SiC 650V 12A, TO220-2L, Industrial Grade
Fiche technique
Non stocké
Min. : 1 000
Mult. : 50

Through Hole TO-220-2L Single 12 A 650 V 1.3 V 108 A 36 uA - 55 C + 175 C Tube
Sanan Semiconductor Diodes Schottky SiC 650V 12A, DFN8*8-4L, Industrial Grade
Fiche technique
Non stocké
Min. : 3 000
Mult. : 3 000
Bobine: 3 000

SMD/SMT DFN-8*8-4 Single 12 A 650 V 1.3 V 108 A 36 uA - 55 C + 175 C Reel
Sanan Semiconductor Diodes Schottky SiC 650V 20A, TO247-3L, Industrial Grade
Fiche technique
Non stocké
Min. : 300
Mult. : 30

Through Hole TO-247-3 Dual Anode Common Cathode 20 A 650 V 1.3 V 80 A 30 uA - 55 C + 175 C Tube
Sanan Semiconductor Diodes Schottky SiC 650V 20A, TO247-2L, Industrial Grade
Fiche technique
Non stocké
Min. : 300
Mult. : 30

Through Hole TO-247-2 Single 20 A 650 V 1.35 V 140 A 40 uA - 55 C + 175 C Tube
Sanan Semiconductor Diodes Schottky SiC 650V 20A, TO3PF-3L, Industrial Grade
Fiche technique
Non stocké
Min. : 300
Mult. : 30

Through Hole TO-3PF-3L Dual Anode Common Cathode 20 A 650 V 1.3 V 80 A 30 uA - 55 C + 175 C Tube
Sanan Semiconductor Diodes Schottky SiC 650V 30A, TO247-3L, Industrial Grade
Fiche technique
Non stocké
Min. : 300
Mult. : 30

Through Hole TO-247-3 Dual Anode Common Cathode 30 A 650 V 1.3 V 135 A 48 uA - 55 C + 175 C Tube
Sanan Semiconductor Diodes Schottky SiC 650V 40A, TO247-3L, Industrial Grade
Fiche technique
Non stocké
Min. : 300
Mult. : 30

Through Hole TO-247-3 Dual Anode Common Cathode 40 A 650 V 1.35 V 140 A 40 uA - 55 C + 175 C Tube
Sanan Semiconductor Diodes Schottky SiC 650V 50A, TO247-2L, Industrial Grade
Fiche technique
Non stocké
Min. : 300
Mult. : 30

Through Hole TO-247-2 Single 50 A 650 V 1.35 V 337 A 120 uA - 55 C + 175 C Tube
Sanan Semiconductor Diodes Schottky SiC 1200V 2A, TO220-2L, Industrial Grade
Fiche technique
Non stocké
Min. : 1
Mult. : 1

Through Hole TO-220-2L Single 2 A 1.2 kV 1.35 V 28 A 8 uA - 55 C + 175 C Tube
Sanan Semiconductor Diodes Schottky SiC 1200V 5A, TO220-2L, Industrial Grade
Fiche technique
Non stocké
Min. : 1 000
Mult. : 50

Through Hole TO-220-2L Single 5 A 1.2 kV 1.35 V 55 A 20 uA - 55 C + 175 C Tube
Sanan Semiconductor Diodes Schottky SiC 1200V 5A, TO252-2L, Industrial Grade
Fiche technique
Non stocké
Min. : 2 500
Mult. : 2 500
Bobine: 2 500

Through Hole TO-252-2L Single 5 A 1.2 kV 1.35 V 55 A 20 uA - 55 C + 175 C Reel
Sanan Semiconductor Diodes Schottky SiC 1200V 10A, TO220-2L, Industrial Grade
Fiche technique
Non stocké
Min. : 1 000
Mult. : 50

Through Hole TO-220-2L Single 10 A 1.2 kV 1.35 V 103 A 30 uA - 55 C + 175 C Tube
Sanan Semiconductor Diodes Schottky SiC 1200V 10A, TO263-2L, Industrial Grade
Fiche technique
Non stocké
Min. : 800
Mult. : 800
Bobine: 800

Through Hole TO 263-2L Single 10 A 1.2 kV 1.35 V 103 A 30 uA - 55 C + 175 C Reel
Sanan Semiconductor Diodes Schottky SiC 1200V 20A, TO247-3L, Industrial Grade
Fiche technique
Non stocké
Min. : 300
Mult. : 30

Through Hole TO-247-3 Dual Anode Common Cathode 20 A 1.2 kV 1.35 V 103 A 30 uA - 55 C + 175 C Tube
Sanan Semiconductor Diodes Schottky SiC 1200V 27A, TO247-2L, Industrial Grade
Fiche technique
Non stocké
Min. : 300
Mult. : 30

Through Hole TO-247-2 Single 27 A 1.2 kV 1.4 V 200 A 80 uA - 55 C + 175 C Tube
Sanan Semiconductor Diodes Schottky SiC 1200V 30A, TO247-3L, Industrial Grade
Fiche technique
Non stocké
Min. : 300
Mult. : 30

Through Hole TO-247-3 Dual Anode Common Cathode 30 A 1.2 kV 1.35 V 140 A 45 uA - 55 C + 175 C Tube
Sanan Semiconductor Diodes Schottky SiC 1200V 40A, TO247-2L, Industrial Grade
Fiche technique
Non stocké
Min. : 300
Mult. : 30

Through Hole TO-247-2 Single 40 A 1.2 kV 1.4 V 356 A 96 uA - 55 C + 175 C Tube
Sanan Semiconductor Diodes Schottky SiC 1200V 50A, TO247-2L, Industrial Grade
Fiche technique
Non stocké
Min. : 300
Mult. : 30

Through Hole TO-247-2 Single 50 A 1.2 kV 1.35 V 504 A 120 uA - 55 C + 175 C Tube
Sanan Semiconductor Diodes Schottky SiC 1200V 60A, TO247-3L, Industrial Grade
Fiche technique
Non stocké
Min. : 300
Mult. : 30

Through Hole TO-247-3 Dual Anode Common Cathode 60 A 1.2 kV 1.3 V 291 A 72 uA - 55 C + 175 C Tube