XPJ101N04N8R & XPJ102N09N8R N-Channel MOSFETs

Torex Semiconductor XPJ101N04N8R and XPJ102N09N8R N-channel MOSFETs feature low on-resistance, reducing energy losses and improving overall system efficiency. Due to their excellent figure of merit (FOM), these MOSFETs are ideal for applications that require high-speed switching characteristics. The XPJ101N04N8R offers on-resistance of 4.4mΩ, while the XPJ102N09N8R offers 9.4mΩ, and both are packaged in a DFN5060-8L package that measures 6mm x 4.9mm x 1.1mm. Torex Semiconductor XPJ101N04N8R and XPJ102N09N8R MOSFETs are suitable for various applications, including DC motors and switching circuits.

Résultats: 2
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Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité.
Qté. RoHS Modèle de ECAO Technologie
Style de montage
Package/Boîte
Polarité du transistor
Nombre de canaux
Vds - Tension de rupture drain-source
Id - Courant continu de fuite
Rds On - Résistance drain-source
Vgs - Tension grille-source
Vgs th - Tension de seuil grille-source
Qg - Charge de grille
Température de fonctionnement max.
Pd - Dissipation d’énergie
Mode canal
Conditionnement
Torex Semiconductor MOSFET N-channel MOSFET 100V, 9.4mohm, 59A
Fiche technique
3 000En stock
Min. : 1
Mult. : 1

Si SMD/SMT DFN5060-8 N-Channel 1 Channel 100 V 59.2 A 14.3 mOhms - 20 V, 20 V 3.8 V 19 nC + 150 C 62.5 W Enhancement Reel
Torex Semiconductor MOSFET N-channel MOSFET 100V, 4.4mohm, 122A
Fiche technique
3 00021/04/2026 attendu
Min. : 1
Mult. : 1

Si SMD/SMT DFN5060-8 N-Channel 1 Channel 100 V 122 A 6.5 mOhms - 20 V, 20 V 3.8 V 40.5 nC + 150 C 125 W Enhancement Reel