DMTH4004 N-Channel Enhancement Mode MOSFET

Diodes Incorporated DMTH4004 N-Channel Enhancement Mode MOSFETs are designed to minimize the on-state resistance RDS(ON). These MOSFETs are ideal for high ambient temperature environments and are rated up to 175°C. The N-Channel MOSFETs are 100% UIS (Unclamped Inductive Switching) tested in production which ensures more reliable and robust end application. These MOSFETs offer a 40V drain-to-source voltage and minimizes switching losses. In DMTH4004 series the DMTH4004SCTBQ, DMTH4004SPSQ, and DMTH4004LK3 MOSFETs are designed to meet the strict requirements of automotive applications. All these MOSFETs are PPAP (Production Part Approval Process) capable and are qualified to AEC-Q101 standard. Diodes Incorporated DMTH4004 series MOSFETs are ideal for use in engine management systems, body control electronics, and DC-DC converters.

Résultats: 9
Sélectionner Image Référence Fab. Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité. Qté. RoHS Modèle de ECAO Technologie Style de montage Package/Boîte Polarité du transistor Nombre de canaux Vds - Tension de rupture drain-source Id - Courant continu de fuite Rds On - Résistance drain-source Vgs - Tension grille-source Vgs th - Tension de seuil grille-source Qg - Charge de grille Température de fonctionnement min. Température de fonctionnement max. Pd - Dissipation d’énergie Mode canal Qualification Conditionnement
Diodes Incorporated MOSFET 40V N-Ch Enh FET 3mOhm 10Vgs 100A 2 415En stock
Min. : 1
Mult. : 1
Bobine: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 40 V 100 A 3 mOhms - 20 V, 20 V 1 V 83 nC - 55 C + 175 C 180 W Enhancement Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFET MOSFET BVDSS: 31V-40V 2 370En stock
Min. : 1
Mult. : 1
Bobine: 2 500

Si SMD/SMT PowerDI5060-8 N-Channel 1 Channel 40 V 100 A 2.5 mOhms - 20 V, 20 V 1 V 82.2 nC - 55 C + 175 C 138 W Enhancement Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFET 40V N-Ch Enh FET Low Rdson 2 363En stock
Min. : 1
Mult. : 1
Bobine: 2 500

Si SMD/SMT PowerDI5060-8 N-Channel 1 Channel 40 V 100 A 2.7 mOhms - 20 V, 20 V 4 V 68.6 nC - 55 C + 175 C 167 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFET 40V 175c N-Ch FET 3mOhm 10Vgs 100A 548En stock
Min. : 1
Mult. : 1
Bobine: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 100 A 3 mOhms - 20 V, 20 V 2 V 68.6 nC - 55 C + 175 C 136 W Enhancement Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFET 40V 175c N-Ch FET 3mOhm 10Vgs 100A 43En stock
Min. : 1
Mult. : 1
Bobine: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 100 A 2.5 mOhms - 20 V, 20 V 2 V 68.6 nC - 55 C + 175 C 136 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFET MOSFET BVDSS: 31V-40V 15 000Stock usine disponible
Min. : 2 500
Mult. : 2 500
Bobine: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 40 V 100 A 3 mOhms - 20 V, 20 V 1 V 83 nC - 55 C + 175 C 180 W Enhancement AEC-Q101 Reel
Diodes Incorporated MOSFET 40V 175c N-Ch FET 3mOhm 10Vgs 100A 10 000Stock usine disponible
Min. : 2 500
Mult. : 2 500
Bobine: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) Reel

Diodes Incorporated MOSFET MOSFET BVDSS: 31V-40V PowerDI5060-8 T&R 2.5K Délai de livraison produit non stocké 24 Semaines
Min. : 2 500
Mult. : 2 500
Bobine: 2 500
Si SMD/SMT PowerDI5060-8 N-Channel 1 Channel 40 V 100 A 2.5 mOhms - 20 V, 20 V 1 V 69.6 nC - 55 C + 175 C 125 W Enhancement AEC-Q101 Reel
Diodes Incorporated MOSFET MOSFET BVDSS: 31V-40V Délai de livraison produit non stocké 24 Semaines
Min. : 2 500
Mult. : 2 500
Bobine: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) AEC-Q101 Reel