Diotec Semiconductor Automotive Advanced Trench Technology MOSFETs

Diotec Semiconductor Automotive Advanced Trench Technology MOSFETs are AEC-Q101 qualified and leverage advanced trench technology, which enhances performance by providing fast switching times and low total gate charge. This results in improved efficiency and reduced power loss. The Diotec Automotive Advanced Trench Technology MOSFETs also feature low on-state resistance, which minimizes conduction losses and enhances overall system performance. These characteristics make the MOSFETs ideal for various automotive and industrial applications where reliability and efficiency are paramount.

Features

  • AEC-Q101 qualified
  • Small signal and power MOSFETs
  • Advanced trench technology
  • Logic level and standard level drive
  • N- and P-channel
  • Fast switching times
  • Low total gate charge
  • Low on-state resistance
  • Single, dual, and H bridge configurations
  • Enhancement mode options
  • Surface mount or through-hole options

Applications

  • Automotive
  • DC/DC converters
  • Power supplies
  • DC drives
  • Power tools
  • Synchronous rectification
  • Reverse polarity protection

Specifications

  • 0ns to 88ns typical turn-on delay time range
  • 0ns to 138ns typical turn-off delay time range
  • 13ns to 72ns rise time range
  • 2ns to 74ns fall time range
  • ±20V gate source voltage
  • 3A to 80A continuous drain current range
  • 30V to 650V drain-source breakdown voltage range
  • 1V to 4V gate-source threshold voltage range
  • 1.1nC to 125nC gate charge range
  • 0.2W to 80W power dissipation range
  • +260°C peak solder temperature
  • -55°C to +150°C operating temperature range
  • Package options
    • DPAK-3 (TO-252-3), TO-252AA-3, and TO-252AA-4
    • PowerQFN 2x2, PowerQFN 3x3, and PowerQFN 5x6
    • QFN-8
    • SOT-23, SOT-23-3, SOT-26, SOT-323, SOT-323-3, SOT-363, SOT363-6, and SOT-883-3
Publié le: 2025-02-28 | Mis à jour le: 2025-03-05