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IXYS DSEPxx-12AZ High-Performance Fast Recovery Diodes

IXYS DSEPxx-12AZ High-Performance Fast Recovery Diodes (HiPerFRED) feature a very low leakage current and short recovery time. The HiPerFRED diodes feature planar passivated chips, improved thermal behavior, soft recovery behavior, and very low Irm values. The D3Pak-HV package of the HiPerFREDs offers a recommended and standardized footprint. The creepage distance between the terminal and the copper backside is greater than or equal to 5.80mm. IXYS DSEPxx-12AZ is ideal for industrial power control applications, power supplies, uninterruptible power supplies (UPS), renewable energy, motor drives, and medical applications.

Features

  • Planar passivated chips
  • Very low leakage current
  • Very short recovery time
  • Improved thermal behavior
  • Soft recovery behavior
  • Avalanche-rated voltage for reliable operation
  • Industry-standard outline, TO-263 (D2Pak-HV)
  • Very low Irm values that reduce
    • Power dissipation within the diode
    • Turn-on loss in the commutating switch
  • Soft reverse recovery for low EMI/RFI
  • Epoxy meets UL 94V-0
  • RoHS compliant

Applications

  • Antiparallel diode for high-frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • UPS

Specifications

  • 1200V maximum reverse blocking voltage, repetitive and non-repetitive
  • 100µA maximum reverse/drain current at +25°C, 0.5mA at +150°C
  • Maximum forward voltage drop
    • At +25°C
      • 262V at 15A
      • 3.19V at 30A
    • At +150°C
      • 1.87V at 15A
      • 2.56V at 30A
  • 12A maximum forward current
  • 5pF typical junction capacitance
  • Power loss calculations
    • 1.03V maximum threshold voltage
    • 46mΩ maximum slope resistance
  • Thermal resistance
    • 1.6K/W maximum junction-to-case
    • 0.25K/W typical case-to-heatsink
  • 95W maximum total power dissipation
  • 90A maximum forward surge current
  • 35A maximum RMS current
  • Temperature ranges
    • -55°C to +175°C virtual junction
    • -55°C to +150°C operating and storage
  • 20N to 60N mounting force with clip

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Publié le: 2019-11-06 | Mis à jour le: 2023-12-12