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Diotec Semiconductor DI005C04PTK-AQ N+P Channel Power MOSFET

Diotec Semiconductor DI005C04PTK-AQ N+P Channel Power MOSFET offers low on-state resistance and fast switching, with AEC-Q101 qualified performance. This MOSFET integrates two complementary transistors in a compact QFN3x3 dual package, enabling efficient switching in space-constrained designs. The DI005C04PTK-AQ N+P channel power MOSFET supports 40V for the N-channel and −40V for the P-channel, with low RDS(on) values. This MOSFET is halogen-free and compliant with RoHS (without exemption), Conflict Minerals, and REACH standards. Typical applications include power management units, battery-powered devices, load switches, and polarity protection.

Features

  • Two complementary MOSFETs
  • Tiny and space-saving package
  • Low profile height
  • Low on state resistance
  • Fast switching times
  • Low gate charge
  • RoHS (without exemptions), REACH, and Conflict Minerals compliant

Applications

  • Power management units
  • Battery-powered devices
  • Load switches
  • Polarity protection

Specifications

  • ±20V gate-source voltage
  • UL 94V-0 case material
  • 0.01g approximate weight
  • Moisture Sensitivity Level (MSL) 3
  • N-Channel (Q1):
    • 40V drain-source voltage
    • 15A continuous drain current
    • 50A peak drain current
    • 35mΩ maximum drain-source on-state resistance at 10V and 2.5A
  • P-Channel (Q2):
    • -40V drain-source voltage
    • -11A continuous drain current
    • -45A peak drain current
    • 60mΩ maximum drain-source on-state resistance at 10V and 2A

Performance Graphs

Performance Graph - Diotec Semiconductor DI005C04PTK-AQ N+P Channel Power MOSFET

Dimensions

Mechanical Drawing - Diotec Semiconductor DI005C04PTK-AQ N+P Channel Power MOSFET
Publié le: 2025-11-18 | Mis à jour le: 2025-12-26