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Diotec Semiconductor DI0A35N06PGK N-Channel Power MOSFET

Diotec Semiconductor DI0A35N06PGK N-Channel Power MOSFET is fabricated using advanced trench technology and offers low on-state resistance, fast switching characteristics, and very low gate charge. This makes it suitable for space‑constrained and battery‑powered designs. The DI0A35N06PGK MOSFET features a 60V drain-source voltage (VDSS), 223mW power dissipation, and 350mA continuous drain current (ID). This power MOSFET operates from -55°C to 150°C storage and junction temperature range. The DI0A35N06PGK N-channel power MOSFET is designed for low‑power switching and polarity protection applications. Typical applications include power management units, battery-powered devices, load switches, and polarity protection.

Features

  • Tiny and space-saving package
  • Low profile height
  • Low on state resistance
  • Fast switching times
  • Low gate charge
  • -55°C to 150°C storage and junction temperature range
  • Pb-free and compliant to RoHS (without exemption)
  • Moisture Sensitivity Level 1 (MSL-1 rated)

Applications

  • Power management units
  • Battery-powered devices
  • Load switches
  • Polarity protection

Specifications

  • 60V Drain-Source voltage (VDSS)
  • 223mW power dissipation
  • 350mA continuous Drain Current (ID)
  • UL 94V-0 rated
  • 1.2A peak drain current
  • ±20V VGSS DC gate source voltage
  • 1kV VGSS ESD gate source voltage

Dimensions

Mechanical Drawing - Diotec Semiconductor DI0A35N06PGK N-Channel Power MOSFET

Schematic

Schematic - Diotec Semiconductor DI0A35N06PGK N-Channel Power MOSFET
Publié le: 2026-04-08 | Mis à jour le: 2026-04-20