Diotec Semiconductor MMFTP2319 P-Channel Enhancement Mode FET
Diotec Semiconductor MMFTP2319 P-Channel Enhancement Mode FET offers fast switching times in a SOT-23/TO-236 package. The MMFTP2319 FET features a 40V maximum drain-source voltage, 750mW maximum power dissipation, and a 4.2A maximum drain current in a -50°C to +150°C junction temperature range. The Diotec Semiconductor MMFTP2319 P-Channel Enhancement Mode FET is ideal for signal processing, battery management, drivers, and logic-level converters.
Features
- Fast switching times
- Commercial/industrial-grade
- UL 94V-0 case material
- SOT-23/TO-236 package style
- Moisture Sensitivity Level (MSL) 1
- Led-free, RoHS and REACH compliant
Applications
- Signal processing
- Battery management
- Drivers
- Logic level converters
Specifications
- 40V maximum drain-source voltage
- ±20V maximum gate-source voltage
- 750mW maximum power dissipation
- 4.2A maximum drain current
- 30A maximum peak drain current
- 1µA maximum drain-source leakage current
- ±100nA maximum gate-source leakage current
- 1V to 3V gate-source threshold voltage range
- 80mΩ to 120mΩ maximum drain-source on-state resistance range
- 1179pF typical input capacitance
- 82pF typical output capacitance
- 40pf typical reverse transfer capacitance
- 15ns to 28ns typical turn-on time range
- 4ns to 19ns typical turn-off time range
- 20nC typical total gate charge
- 4nC typical gate-source charge
- 2.6nC typical gate-drain charge
- 4.6Ω typical intrinsic gate resistance
- 1.2V maximum forward voltage
- 13.3ns typical reverse recovery time
- 8.5nC reverse recovery charge
- -55°C to +150°C junction temperature range
Additional Resources
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Publié le: 2023-02-21
| Mis à jour le: 2023-02-24