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Infineon Technologies S25FL MIRRORBIT™ Flash Non-Volatile Memory

Infineon Technologies S25FL128S/S25FL256S MIRRORBIT™ Flash Non-Volatile Memory devices employ MIRRORBIT technology that stores two data bits in each memory array transistor. These Infineon devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. Infineon S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.

Features

  • CMOS 3.0V core with versatile I/O
  • Serial Peripheral Interface (SPI) with multi-I/O
    • SPI clock polarity and phase modes 0 and 3
    • Double Data Rate (DDR) option
    • Extended addressing of 24- or 32-bit address options
    • Serial command set and footprint compatible with S25FL-A, S25FL-K, and S25FL-P SPI families
    • Multi I/O command set and footprint compatible with S25FL-P SPI family
  • READ Commands
    • Normal, fast, dual, quad, fast DDR, dual DDR, quad DDR
    • AutoBoot - power up or reset and execute a normal or quad read command automatically at a preselected address
    • Common Flash Interface (CFI) data for configuration information
  • Programming (1.5Mbytes/s)
    • 256 or 512Byte page programming buffer options
    • Quad-Input Page Programming (QPP) for slow clock systems
    • Automatic ECC -internal hardware Error Correction Code generation with single bit error correction
  • Erase (0.5 to 0.65Mbytes/s)
    • Hybrid sector size option - physical set of thirty-two 4kbyte sectors at top or bottom of address space with all remaining sectors of 64kbytes, for compatibility with prior generation S25FL devices
    • Uniform sector option - always erase 256kbyte blocks for software compatibility with higher density and future devices
  • Cycling endurance
    • 100,000 Program-erase cycles, minimum
  • Data retention
    • 20 Year Data Retention, minimum
  • Security features
    • One Time Program (OTP) array of 1024 bytes
    • Block Protection:
      • Status Register bits to control protection against program or erase of a contiguous range of sectors
      • Hardware and software control options
    • Advanced Sector Protection (ASP)
      • Individual sector protection is controlled by boot code or password
  • Cypress® 65nm MIRRORBIT technology with Eclipse™ architecture
  • Core Supply Voltage of 2.7V to 3.6V
  • I/O Supply Voltage of 1.65V to 3.6V
    • SO16 and FBGA packages
  • Temperature Range / Grade:
    • Industrial (-40°C to +85°C)
    • Industrial Plus (-40°C to +105°C)
    • Automotive AEC-Q100 Grade 3 (-40°C to +85°C)
    • Automotive AEC-Q100 Grade 2 (-40°C to +105°C)
    • Automotive AEC-Q100 Grade 1 (-40°C to +125°C)
  • Packages (all Pb-free)
    • 16-lead SOIC (300mil)
    • WSON 6 x 8mm
    • BGA-24 6 x 8mm
      • 5 x 5 ball (FAB024) and 4 x 6 ball (FAC024) footprint options
      • Known good die and known tested die

Logic Block Diagram

Block Diagram - Infineon Technologies S25FL MIRRORBIT™ Flash Non-Volatile Memory
Publié le: 2012-11-05 | Mis à jour le: 2023-04-25