IXYS 1700V XPT™ High Voltage IGBTs
IXYS 1700V XPT™ (eXtreme-light Punch Through) IGBTs are designed for high-voltage, high-speed power conversion applications. Developed using thin-wafer XPT technology, these IXYS IGBTs provide reduced thermal resistance, low tail current, low-energy loss, and high-speed switching capabilities.
The devices' positive temperature coefficient of the on-state voltage enables designers to use the IGBTs in parallel. This capability allows a reduction in the associated gate drive circuitry, a simpler design, and an improvement in overall system reliability.
The co-packed fast recovery diodes offer low reverse recovery times. The fast recovery diodes are optimized for smooth switching waveforms and significantly lower electromagnetic interference (EMI).
Features
- Thin wafer XPT technology
- Low on-state voltages VCE (sat)
- Co-packed fast recovery diodes
- Positive temperature coefficient of VCE (sat)
- International standard size high-voltage packages
- High efficiency
- Elimination of multiple series-connected devices
- Increased reliability of power systems
- High voltage package
- High blocking voltage
- Low saturation voltage
- Low gate drive requirement
- High power density
Applications
- Switch-mode and resonant-mode power supplies
- High-voltage power supplies
- High-voltage test equipment
- Uninterruptible power supplies (UPS)
- Laser and X-ray generators
- Capacitor-discharge circuits
- AC switches
Publié le: 2017-07-10
| Mis à jour le: 2022-03-29