Micron UFS 4.0 Mobile NAND Memory

Micron Universal Flash Storage (UFS) 4.0 Mobile NAND Memory is a high-performance storage interface for mobile, automotive, and computing systems, which demand low power consumption, reliability, and high quality. The UFS 4.0 is built on Micron’s advanced 232-layer triple-level cell (TLC) NAND, which provides 100% higher write bandwidth and 75% higher read bandwidth than the previous-generation UFS 3.1 176-layer NAND. The upgraded 232-layer 3D NAND architecture features more bits per square millimeter of silicon by stacking the NAND bit cell array into more layers. This enables greater density, capacity growth, and performance improvements. The module utilizes a six-plane architecture for higher random read throughput. Micron UFS 4.0 Mobile NAND Memory provides up to 4300MBps sequential read speeds and up to 4000MBps sequential write speeds. The UFS 4.0 storage solution is offered high capacities of up to 1TB.