NXP Semiconductors AFIC901N RF Reference Circuits
NXP Semiconductors AFIC901N RF Reference Circuits enable rapid evaluation and prototyping of the NXP AFIC901N RF LDMOS Power Amplifier. The AFIC901NT1 is a 2-stage, high-gain amplifier designed to provide optimal performance at any frequency in the 1.8MHz to 1000MHz range. The high gain, ruggedness, and wideband performance of this device make it ideal for use as a pre-driver and driver in a wide range of industrial, medical, and communications applications.
Features
- AFIC901N RF LDMOS wideband integrated power amplifier
- Integrated ESD protection
- Options
- 136MHz to 174MHz, 1W output, 31dB gain
- 350MHz to 520MHz, 8W output, 39dB gain
- 760MHz to 870MHz, 1W output, 25dB gain
VHF Performance
UHF Performance
Narrowband Performance
Related Products
NXP Semiconductors RF Reference Circuits
Ease of use solutions designed to accelerate prototyping RF applications for faster time to market.
Publié le: 2019-11-18
| Mis à jour le: 2023-10-17