Qorvo QPD2560L 300W GaN/SiC HEMT
Qorvo QPD2560L 300W GaN/SiC HEMT is a high‑power GaN-on-SiC High Electron Mobility Transistor (HEMT) designed for demanding L‑Band applications, operating across the 1.0GHz to 1.5GHz frequency range. Engineered to deliver robust RF performance, the Qorvo QPD2560L provides up to 55.4dBm of saturated output power, 15dB of large‑signal gain, and 65% drain efficiency, making the HEMT well‑suited for both CW and pulsed operation.
The device features an internally pre‑matched input to simplify external matching requirements and reduce board space, while the output remains unmatched for design flexibility. Housed in a rugged NI‑650 industry‑standard air‑cavity package, the QPD2560L is optimized for L‑Band military and civilian radar, electronic warfare, professional communications, ISM applications, and wideband/narrowband high‑power amplifiers. The device's long‑pulse capability and high thermal robustness further enhance the suitability for mission‑critical RF systems.
Features
- 1.0GHz to 1.5GHz frequency range
- 50V operation
- 338W output power (typical P3dB performance of 100µs pulse width, 10% duty cycle at 1.2GHz)
- 43dBm maximum RF input power
- 16.3dB gain
- 69.2% drain efficiency, 33A maximum current
- 145V maximum breakdown voltage
- 4-lead air cavity NI-650 package, 29.00mm x 5.84mm
- Long pulse capable (e.g. 2ms-25%)
- Moisture Sensitivity Level (MSL) 3
- -40°C to +85°C operating temperature range
- Lead-free, Halogen-/antimony-free, and RoHS-compliant
Applications
- Military radar
- Civilian radar
- Professional and military radio communications
- Test instrumentation
- Wideband or narrowband amplifiers
- Jammers
Functional Block Diagram
Dimensions: IN.
