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STMicroelectronics HB Trench Gate Field-Stop IGBTs

STMicroelectronics HB Trench Gate Field-Stop IGBTs use an advanced proprietary trench gate and field stop structure. These HB devices represent a compromise of conduction and switching losses to maximize frequency converter efficiency. A slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Features

  • Designed for soft commutation only
  • Maximum junction temperature: TJ = +175°C
  • High-speed switching series
  • Minimized tail current
  • VCE(sat) = 1.55V (typ.) at IC = 30A
  • Low VF soft recovery co-packaged diode
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance
  • Lead-free package
  • Very fast soft recovery antiparallel diode

Applications

  • Microwave oven
  • Resonant converters
  • Photovoltaic inverters
  • High frequency converters

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Publié le: 2016-04-21 | Mis à jour le: 2023-10-17