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STMicroelectronics MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.

Features

  • Low input capacitance and gate charge
  • Low gate input resistance
  • Best RDS(on)*Qg in the industry

Applications

  • Switching applications
  • LC converters
  • Resonant converters

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STMicroelectronics Standard Products

A broad range of drop-in replacements for general-purpose analog ICs, discretes, and serial EEPROMs.

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View Results ( 20 ) Page
Numéro de pièce Fiche technique Id - Courant continu de fuite Vgs - Tension grille-source Qg - Charge de grille Pd - Dissipation d’énergie
STB40N60M2 STB40N60M2 Fiche technique 34 A - 25 V, 25 V 57 nC 250 W
STD7NM80 STD7NM80 Fiche technique 6.5 A - 30 V, 30 V 18 nC 90 W
STI28N60M2 STI28N60M2 Fiche technique 22 A - 25 V, 25 V 36 nC 170 W
STP18NM80 STP18NM80 Fiche technique 17 A - 30 V, 30 V 70 nC 190 W
STD5N60M2 STD5N60M2 Fiche technique 3.5 A - 25 V, 25 V 8.5 nC 45 W
STL9N60M2 STL9N60M2 Fiche technique 4.8 A - 25 V, 25 V 10 nC 48 W
STB28N60M2 STB28N60M2 Fiche technique 22 A - 25 V, 25 V 36 nC 170 W
STL13N60M6 STL13N60M6 Fiche technique 7 A - 25 V, 25 V 13 nC 52 W
STP8N80K5 STP8N80K5 Fiche technique 6 A - 30 V, 30 V 16.5 nC 110 W
STL10N60M6 STL10N60M6 Fiche technique 5.5 A - 25 V, 25 V 8.8 nC 48 W
Publié le: 2012-07-24 | Mis à jour le: 2023-12-14