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Taiwan Semiconductor TQM0xNH04CR Power MOSFETs

Taiwan Semiconductor TQM0xNH04CR Power MOSFETs are AEC-Q101-qualified single N-channel MOSFETs. These power MOSFETs offer excellent FOM and wettable flank leads for enhanced AOI. The N-channel power MOSFETs are 100% UIS and Rg tested and operate at 175°C junction temperature. These power MOSFETs feature 40V drain-source voltage and 400A pulse drain current and come in a PDFN56U package. The TQM0xNH04CR power MOSFETs are halogen-free and RoHS-compliant. Typical applications include automotive applications, solenoid and motor drivers, and DC-to-DC converters.

Features

  • Excellent FOM
  • AEC-Q101 qualified
  • Wettable flank leads for enhanced AOI
  • 100% UIS and Rg tested
  • Moisture Sensitivity Level-1 (MSL-1) per J-STD-020
  • PDFN56U package
  • RoHS compliant
  • Halogen-free

Specifications

  • PDFN56U package
  • -55°C to 175°C operating junction temperature range
  • 40V drain-source voltage (VDS)
  • 400A pulsed drain current (IDM)

Applications

  • Automotive applications
  • Solenoid and motor drivers
  • DC-to-DC converters

Package Outline Dimensions

Mechanical Drawing - Taiwan Semiconductor TQM0xNH04CR Power MOSFETs

Videos

View Results ( 2 ) Page
Numéro de pièce Fiche technique Id - Courant continu de fuite Rds On - Résistance drain-source Vgs - Tension grille-source Vgs th - Tension de seuil grille-source Qg - Charge de grille Pd - Dissipation d’énergie Temps de montée Temps de descente Délai de désactivation type Délai d'activation standard
TQM019NH04CR RLG TQM019NH04CR RLG Fiche technique 214 A 2.3 mOhms - 20 V, 20 V 3.6 V 64 nC 150 W 76 ns 18 ns 52 ns 23 ns
TQM025NH04CR RLG TQM025NH04CR RLG Fiche technique 174 A 2.5 mOhms - 20 V, 20 V 3.6 V 42 nC 136 W 70.6 ns 5.8 ns 27 ns 15.1 ns
Publié le: 2023-07-17 | Mis à jour le: 2024-02-02