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Taiwan Semiconductor TQMx Automotive Power MOSFETs

Taiwan Semiconductor TQMx Automotive Power MOSFETs are designed by trench technology for single and dual channels. These P dual channels are compatible with conventional PDFN packages. These MOSFETs feature a flat lead package suitable for compact designs with good thermal performance and a Wettable Flank (WF) for Automated Optical Inspection (AOI). The Taiwan Semiconductor TQMx MOSFET family qualifies for the AEC-Q101 standards to meet the high-performance requirement for automotive applications. These power MOSFETs operate at -55°C to 175°C and are halogen-free according to IEC 61249-2-21. Typical applications include 12V automotive systems, solenoid and motor control, automotive transmission control, and DC-DC converters.

Features

  • AEC-Q101 qualified
  • 100% UIS and Rg tested
  • Wettable Flank (WF) for enhanced AOI
  • RoHS compliant
  • Halogen-free according to IEC 61249-2-21

Applications

  • 12V automotive systems
  • Solenoid and motor control
  • Automotive transmission control
  • DC-DC converters

Videos

Associated Products

Taiwan Semiconductor TQMxNB04CR & TQMxNB06CR 40V/60V Automotive MOSFETs

AEC-Q101 qualified, 100% UIS and Rg tested with a -55°C to +175°C junction temperature range.

Learn Moreà propos de Taiwan Semiconductor TQMxNB04CR & TQMxNB06CR 40V/60V Automotive MOSFETs View Productslié à Taiwan Semiconductor TQMxNB04CR & TQMxNB06CR 40V/60V Automotive MOSFETs

Taiwan Semiconductor TQM150 Automotive MOSFET

Dual N-channel, 40V MOSFET with 175°C operating junction temperature.

Learn Moreà propos de Taiwan Semiconductor TQM150 Automotive MOSFET View Productslié à Taiwan Semiconductor TQM150 Automotive MOSFET
View Results ( 64 ) Page
Numéro de pièce Fiche technique Package/Boîte Nombre de canaux Vds - Tension de rupture drain-source Id - Courant continu de fuite Rds On - Résistance drain-source Vgs - Tension grille-source Vgs th - Tension de seuil grille-source Qg - Charge de grille Pd - Dissipation d’énergie Type de transistor Transconductance directe - min.
TQM300NB06DCR RLG TQM300NB06DCR RLG Fiche technique PDFN56U-6 2 Channel 60 V 6 A 30 mOhms - 20 V, 20 V 3.8 V 20 nC 2.5 W 2 N-Channel 26 S
TQM130NB06CR RLG TQM130NB06CR RLG Fiche technique PDFN56U-5 1 Channel 60 V 10 A 13 Ohms - 20 V, 20 V 3.8 V 40 nC 3.1 W 1 N-Channel 44 S
TQM025NB04CR RLG TQM025NB04CR RLG Fiche technique PDFN56U-5 1 Channel 40 V 24 A 2.5 mOhms - 20 V, 20 V 3.8 V 118 nC 3.1 W 1 N-Channel 72 S
TQM110NB04DCR RLG TQM110NB04DCR RLG Fiche technique PDFN56U-6 2 Channel 40 V 10 A 11 mOhms - 20 V, 20 V 3.8 V 26 nC 2.5 W 2 N-Channel 32 S
TQM250NB06DCR RLG TQM250NB06DCR RLG Fiche technique PDFN56U-6 2 Channel 60 V 6 A 25 mOhms - 20 V, 20 V 3.8 V 24 nC 2.5 W 2 N-Channel 27 S
TQM033NB04CR RLG TQM033NB04CR RLG Fiche technique PDFN56U-8 1 Channel 40 V 121 A 3.3 mOhms - 20 V, 20 V 3.8 V 87 nC 107 W 1 N-Channel 68 S
TQM110NB04CR RLG TQM110NB04CR RLG Fiche technique PDFN56U-5 1 Channel 40 V 12 A 11 mOhms - 20 V, 20 V 3.8 V 25 nC 3.1 W 1 N-Channel 72 S
TQM150NB04CR RLG TQM150NB04CR RLG Fiche technique PDFN56U-8 1 Channel 40 V 41 A 15 mOhms - 20 V, 20 V 3.8 V 20 nC 56 W 1 N-Channel 38 S
TQM300NB06CR RLG TQM300NB06CR RLG Fiche technique PDFN56U-5 1 Channel 60 V 6 A 30 mOhms - 20 V, 20 V 3.8 V 20 nC 3.1 W 1 N-Channel 30 S
TQM070NB04CR RLG TQM070NB04CR RLG Fiche technique PDFN56U-5 1 Channel 40 V 15 A 7 mOhms - 20 V, 20 V 3.8 V 42 nC 3.1 W 1 N-Channel 55 S
Publié le: 2020-10-26 | Mis à jour le: 2025-02-26