Vishay / Siliconix MicroFoot® Power MOSFETs

Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The Vishay Siliconix MicroFoot Power MOSFETs low on-resistance also means a lower voltage drop across the load switch to prevent an unwanted under-voltage lockout.

Features

  • TrenchFET® power MOSFET
  • Low-on resistance (RDS(on))
  • Ultrasmall
  • Ultrathin
  • Typical ESD protection of 3000V HBM
  • Compliant to RoHS Directive 2002/95/EC

Applications

  • Low on-resistance load switch, charger switch, and battery switch for portable devices
  • Mobile computing, smartphones, tablet PCs
  • Load switches, battery switches, and charger switches in portable device applications
  • DC/DC converters
View Results ( 20 ) Page
Numéro de pièce Fiche technique Description
SI8819EDB-T2-E1 SI8819EDB-T2-E1 Fiche technique MOSFET -12V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
SI8466EDB-T2-E1 SI8466EDB-T2-E1 Fiche technique MOSFET 8V Vds 5V Vgs MICRO FOOT 1 x 1
SI8425DB-T1-E1 SI8425DB-T1-E1 Fiche technique MOSFET -20V Vds 10V Vgs MICRO FOOT 1.6 x 1.6
SI8489EDB-T2-E1 SI8489EDB-T2-E1 Fiche technique MOSFET -20V Vds 12V Vgs MICRO FOOT 1 x 1
SI8406DB-T2-E1 SI8406DB-T2-E1 Fiche technique MOSFET 20V Vds 8V Vgs MICRO FOOT 1.5 x 1
SI8487DB-T1-E1 SI8487DB-T1-E1 Fiche technique MOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6
SI8806DB-T2-E1 SI8806DB-T2-E1 Fiche technique MOSFET 12V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
SI8800EDB-T2-E1 SI8800EDB-T2-E1 Fiche technique MOSFET 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
SI8483DB-T2-E1 SI8483DB-T2-E1 Fiche technique MOSFET -12V Vds 10V Vgs MICRO FOOT 1.5 x 1
SI8817DB-T2-E1 SI8817DB-T2-E1 Fiche technique MOSFET -20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
Publié le: 2012-12-06 | Mis à jour le: 2024-05-24