SiC MOSFETs

GeneSiC Semiconductor’s G3R™ Silicon Carbide (SiC) MOSFETs offer RDS(ON) levels from 12mΩ to 1000mΩ and robustness for efficiency and system reliability in automotive and industrial applications. These MOSFETs deliver a fast switching frequency, increased power density, reduced ringing (EMI), and a compact size. The G3R SiC MOSFETs are offered in optimized low-inductance discrete packages (SMD and through-hole). The modules are highly optimized for power system designs that require elevated efficiency levels at all operating temperatures and ultra-fast switching speeds with ultra-low losses. GeneSiC SiC MOSFETs provide faster switching and lower ON resistance than silicon-based products. Additional features include superior electric characteristics at high temperatures and significantly lower switching loss, allowing smaller peripheral components to be used.

Résultats: 8
Sélectionner Image Référence
 Fab.
Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité.
Qté. RoHS Modèle de ECAO Style de montage
Package/Boîte
Polarité du transistor
Nombre de canaux
Vds - Tension de rupture drain-source
Id - Courant continu de fuite
Rds On - Résistance drain-source
Vgs - Tension grille-source
Vgs th - Tension de seuil grille-source
Qg - Charge de grille
Température de fonctionnement min.
Température de fonctionnement max.
Pd - Dissipation d’énergie
Mode canal
GeneSiC Semiconductor SiC MOSFET 1200V 12mohm TO-247-4 G3R SiC MOSFET
Fiche technique
1 766En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 111 A 12 mOhms - 10 V, + 22 V 2.7 V 288 nC - 55 C + 175 C 567 W Enhancement
GeneSiC Semiconductor SiC MOSFET 1700V 160mohm TO-247-3 G3R SiC MOSFET
Fiche technique
898En stock
Min. : 1
Mult. : 1

Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 17 A 160 mOhms - 5 V, + 15 V 2.7 V 29 nC - 55 C + 175 C 138 W Enhancement
GeneSiC Semiconductor SiC MOSFET 1700V 20mohm TO-247-4 G3R SiC MOSFET
Fiche technique
26En stock
15021/07/2026 attendu
Min. : 1
Mult. : 1

Through Hole TO-247-4 N-Channel 1 Channel 1.7 kV 101 A 20 mOhms - 5 V, + 15 V 2.7 V 256 nC - 55 C + 175 C 569 W Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 30mohm TO-247-4 G3R SiC MOSFET
Fiche technique
600En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 70 A 30 mOhms - 5 V, + 15 V 2.7 V 118 nC - 55 C + 175 C 281 W Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 40mohm TO-247-4 G3R SiC MOSFET
Fiche technique
506En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 55 A 40 mOhms - 5 V, + 15 V 2.7 V 88 nC - 55 C + 175 C 228 W Enhancement
GeneSiC Semiconductor SiC MOSFET 1700V 45mohm TO-247-4 G3R SiC MOSFET
Fiche technique
303En stock
Min. : 1
Mult. : 1

Through Hole TO-247-4 N-Channel 1 Channel 1.7 kV 48 A 45 mOhms - 5 V, + 15 V 2.7 V 106 nC - 55 C + 175 C 284 W Enhancement
GeneSiC Semiconductor SiC MOSFET 1700V 450mohm TO-247-3 G3R SiC MOSFET
Fiche technique
164En stock
1 20019/06/2026 attendu
Min. : 1
Mult. : 1

Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 7 A 450 mOhms - 5 V, + 15 V 2.7 V 13 nC - 55 C + 175 C 70 W Enhancement
GeneSiC Semiconductor SiC MOSFET 1700V 450mohm TO-263-7 G3R SiC MOSFET
Fiche technique
80019/06/2026 attendu
Min. : 1
Mult. : 1
Bobine: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.7 kV 8 A 630 mOhms - 5 V, + 15 V 2.7 V 13 nC - 55 C + 175 C 71 W Enhancement