Vishay Semiconductors SiA427DJ 8V TrenchFET® Power MOSFETs
Vishay Semiconductors SiA427DJ 8V TrenchFET® Power MOSFETs have the lowest on-resistance for a p-channel device in the thermally enhanced PowerPAK® SC-70 2mm by 2mm footprint area. The on-resistance of the SiA427DJ is up to 47% lower than the closest competing p-channel device. The 1.2V low on-resistance rating of SiA427DJ TrenchFET power MOSFETs makes them ideal for low bus voltages.
Applications using a 1.2V power bus will also benefit from the MOSFET's low on-resistance at 1.5V and 1.8V as power line fluctuate, allowing the SiA427DJ to provide the best overall power savings. The ultra-small PowerPAK SC-70 package of the Vishay Semiconductors SiA427DJ is optimized for small handheld electronics. It is ideal for load switches in cell phones, smart phones, MP3 players, digital cameras, and more.
Features
- Halogen-free according to IEC 61249-2-21 definition
- TrenchFET® Power MOSFET
- 100% Rg Tested
- Thermally enhanced PowerPAK® SC-70 package
- Small footprint area
- Low on-resistance
- 16mΩ at 4.5V
- 26mΩ at 1.8V
- 32mΩ at 1.5V
- 95mΩ at 1.2V
- Compliant to RoHS Directive 2002/95/EC
Applications
- Load switch, for 1.2 V power line for portable and handheld devices
Associated Products
Vishay / Siliconix Power MOSFETs
Low-to-high power MOSFETs that meet the increasing demands of applications in growth markets.
Package Dimensions
Publié le: 2011-08-18
| Mis à jour le: 2022-03-11