Vishay Semiconductors VSLB4940 High-Speed Infrared Emitting Diode
Vishay Semiconductors VSLB4940 High-Speed Infrared Emitting Diode is suitable for high pulse current operation. The VSLB4940 diode offers 940nm peak wavelength, 65mW/sr radiant intensity, ±22° beam angle, 1.42V typical forward voltage, and 15ns fall time. This infrared diode is available in GaAlAs, Multi-quantum Well (MQW) technology, and is molded in a clear plastic package. The VSLB4940 infrared diode comes in a leaded type T-1 package and ∅3mm dimensions. This infrared diode is suitable for applications like infrared remote control units, reflective sensors, and light barriers.
Features
- Leaded type package
- High-speed
- High radiant power
- Low forward voltage
- Suitable for high pulse current operation
- Good spectral matching to Silicon (Si) photodetectors
Specifications
- 940nm peak wavelength (λp)
- 65mW/sr radiant intensity
- ±22° angle of half intensity (ψ)
- ∅3mm dimensions
- 15ns rise and fall time
- 160mW power dissipation
- 1.42V forward voltage
- 100mA forward current
- 5V reverse voltage
- 100°C junction temperature
- -25°C to 85°C operating temperature range
- -40°C to 100°C storage temperature range
- 260°C soldering temperature
VSLB4940 Package Dimensions
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Publié le: 2018-05-10
| Mis à jour le: 2023-03-11