ROHM Semiconductor BST580D12P4A1x1 TRCDRIVE pack™ with Molded Modules
ROHM Semiconductor BST580D12P4A151 and BST580D12P4A161 TRCDRIVE pack™ with 2-in-1 SiC Molded Modules offer 1200V rated voltage and integrate 4th Generation SiC MOSFETs in a compact package. This power-dense construction is designed to greatly reduce the size of electric vehicle (xEV) inverters. These modules support up to 300kW and feature a unique terminal configuration that meets the key challenges of traction inverters regarding higher efficiency, miniaturization, and fewer person-hours. ROHM Semiconductor BST580D12P4A151 and BST580D12P4A161 modules offer dimensions of 58.6mm x 52.5mm. These modules do not require soldering for the signal terminals, providing ease of use for designers.
Features
- Combination of press-fit pins and molding technology results in smaller design
- High power density due to higher heat dissipation and lower stray inductance
- Ease of use, including no soldering for signal terminals
- Discrete packaging production system for high productivity
- Designed for automotive traction inverters
- AQG 324 qualified
Specifications
- 1200VDSS maximum voltage
- 575A maximum DC current
- Maximum AC current
- BST580D12P4A151: 475A
- BST580D12P4A161: 494A
- 1.9mΩ maximum RDS(on)
- Heat sink assembly
- BST580D12P4A151: TIM: heat dissipation sheet
- BST580D12P4A161: Ag sinter
- 58.6mm × 52.5mm dimensions
TRCDRIVE pack
Power-Dense Design
Related Modules
ROHM Semiconductor BST740D08P4A1x4 TRCDRIVE pack™ with Molded Modules
Features 750V rated voltage in 58.6mm x 52.5mm package to help reduce the size of xEV inverters.
ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™ with Molded Modules
Features 1200V rated voltage in 41.6mm × 52.5mm package and integrates 4th Generation SiC MOSFETs.
ROHM Semiconductor BST500D08P4A1x4 TRCDRIVE pack™ with Molded Modules
Provides 750V rated voltage in 41.6mm × 52.5mm package and helps reduce the size of xEV inverters.
Publié le: 2024-06-13
| Mis à jour le: 2024-06-19