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Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité.
Qté. RoHS Modèle de ECAO Technologie
Style de montage
Package/Boîte
Polarité du transistor
Nombre de canaux
Vds - Tension de rupture drain-source
Id - Courant continu de fuite
Rds On - Résistance drain-source
Vgs - Tension grille-source
Vgs th - Tension de seuil grille-source
Qg - Charge de grille
Température de fonctionnement min.
Température de fonctionnement max.
Pd - Dissipation d’énergie
Mode canal
Nom commercial
Conditionnement

Infineon Technologies MOSFET HIGH POWER_LEGACY
Fiche technique
803En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM
Fiche technique
714En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms - 20 V, 20 V 3.5 V 70 nC - 55 C + 150 C 278 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM
Fiche technique
3 840En stock
Min. : 1
Mult. : 1
: 3 000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 22.4 A 162 mOhms - 20 V, 20 V 3.5 V 44 nC - 40 C + 150 C 176 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET N-Ch 600V 10.6A DPAK-2
Fiche technique
7 256En stock
Min. : 1
Mult. : 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 10.6 A 380 mOhms - 20 V, 20 V 3.5 V 19 nC - 55 C + 150 C 31 W Enhancement CoolMOS Reel, Cut Tape

Infineon Technologies MOSFET HIGH POWER_PRC/PRFRM
Fiche technique
509En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20.2 A 171 mOhms - 20 V, 20 V 3.5 V 37 nC - 55 C + 150 C 151 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_PRC/PRFRM
Fiche technique
426En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7.3 A 540 mOhms - 20 V, 20 V 3.5 V 12 nC - 55 C + 150 C 28 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_PRC/PRFRM
Fiche technique
689En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20.2 A 190 mOhms - 20 V, 20 V 3.5 V 37 nC - 55 C + 150 C 151 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_LEGACY
Fiche technique
1 971En stock
MouseReel disponible
Min. : 1
Mult. : 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7.3 A 600 mOhms - 20 V, 20 V 4 V 12 nC - 55 C + 150 C 63 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM
Fiche technique
812En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30 A 113 mOhms - 20 V, 20 V 3.5 V 56 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_PRC/PRFRM
Fiche technique
328En stock
50021/09/2026 attendu
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20.2 A 190 Ohms - 20 V, 20 V 3.5 V 37 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_PRICE/PERFORM
Fiche technique
5 007En stock
Min. : 1
Mult. : 1
: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 23.8 A 160 mOhms - 20 V, 20 V 4 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM
Fiche technique
854En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms - 20 V, 20 V 3.5 V 70 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM
Fiche technique
465En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 77.5 A 37 mOhms - 20 V, 20 V 3.5 V 170 nC - 55 C + 150 C 481 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM
Fiche technique
784En stock
1 200Sur commande
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 77.5 A 37 mOhms - 20 V, 20 V 3.5 V 170 nC - 55 C + 150 C 481 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM
Fiche technique
1 073En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms - 20 V, 20 V 3.5 V 70 nC - 55 C + 150 C 278 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_LEGACY
Fiche technique
343En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM
Fiche technique
377En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms - 20 V, 20 V 3.5 V 70 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 10.4A TO220FP-3
Fiche technique
30En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 10.4A TO220FP-3
Fiche technique
99822/10/2026 attendu
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 8.6A TO220FP-3
Fiche technique
447En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 16.8 A 538 mOhms - 20 V, 20 V 4 V 31 nC - 55 C + 150 C 33 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 7.7A TO220FP-3
Fiche technique
529En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 13.8 A 252 mOhms - 20 V, 20 V 3.5 V 25.5 nC - 55 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM
Fiche technique
486En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms - 20 V, 20 V 3.5 V 70 nC - 55 C + 150 C 278 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM
Fiche technique
276En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30 A 113 mOhms - 20 V, 20 V 3.5 V 56 nC - 55 C + 150 C 219 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM
Fiche technique
181En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 53.5 A 63 mOhms - 20 V, 20 V 3.5 V 100 nC - 55 C + 150 C 391 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM
Fiche technique
218En stock
72010/09/2026 attendu
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 53.5 A 63 mOhms - 20 V, 20 V 3.5 V 100 nC - 55 C + 150 C 391 W Enhancement CoolMOS Tube