Toshiba MOSVII MOSFET

Résultats: 69
Sélectionner Image Référence Fab. Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité. Qté. RoHS Modèle de ECAO Technologie Style de montage Package/Boîte Polarité du transistor Nombre de canaux Vds - Tension de rupture drain-source Id - Courant continu de fuite Rds On - Résistance drain-source Vgs - Tension grille-source Vgs th - Tension de seuil grille-source Qg - Charge de grille Température de fonctionnement min. Température de fonctionnement max. Pd - Dissipation d’énergie Mode canal Nom commercial Conditionnement
Toshiba MOSFET N-Ch MOS 2.5A 650V 35W 490pF 2.51 240En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 2.5 A 2.51 Ohms 35 W MOSVII Tube
Toshiba MOSFET N-Ch 200V 70A 410W MOSVII 160nC .0029 90En stock
Min. : 1
Mult. : 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 200 V 70 A 27 mOhms - 20 V, 20 V 3.5 V 160 nC - 55 C + 150 C 410 W Enhancement MOSVII
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=45W F=1MHZ 107En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 18 A 139 mOhms - 20 V, 20 V 1.5 V 60 nC - 55 C + 150 C 45 W Enhancement MOSVII Tube
Toshiba MOSFET N-Ch MOS 4A 525V 35W 490pF 1.7 Ohm 300En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 525 V 4 A 1.7 Ohms 35 W MOSVII
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR DP(OS) MOQ=2000 V=600 PD=80W F=1MHZ 1 754En stock
Min. : 1
Mult. : 1
Bobine: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 4 A 1.7 Ohms - 30 V, 30 V 2.4 V 12 nC - 55 C + 150 C 100 W Enhancement MOSVII Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch MOS 10A 500V 45W 1050pF 0.72 83En stock
20017/02/2026 attendu
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 10 A 620 mOhms - 30 V, 30 V 2 V 20 nC - 55 C + 150 C 45 W Enhancement MOSVII Tube
Toshiba MOSFET N-Ch MOS 10A 40V 25W 410pF 0.029 103En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 450 V 11 A 500 mOhms - 30 V, 30 V 2 V 20 nC - 55 C + 150 C 40 W Enhancement MOSVII Tube
Toshiba MOSFET N-Ch MOS 12A 600V 45W 1800pF 0.55 72En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 12 A 550 mOhms - 30 V, 30 V 2 V 38 nC - 55 C + 150 C 45 W Enhancement MOSVII Tube
Toshiba MOSFET N-Ch MOS 13A 500V 45W 1550pF 0.47 136En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 12.5 A 390 mOhms - 30 V, 30 V 4 V 28 nC - 55 C + 150 C 45 W Enhancement MOSVII Tube
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR DPAK-OS PD=96W F=1MHZ 1 808En stock
Min. : 1
Mult. : 1
Bobine: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 250 V 13 A 250 mOhms - 20 V, 20 V 1.5 V 25 nC - 55 C + 150 C 96 W Enhancement MOSVII Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch MOS 18A 500V 50W 2600pF 0.27 61En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 18 A 270 mOhms - 30 V, 30 V 2 V 45 nC - 55 C + 150 C 50 W Enhancement MOSVII Tube
Toshiba MOSFET N-Ch MOS 19A 450V 50W 2600pF 0.25 73En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 450 V 19 A 250 mOhms 50 W MOSVII Tube
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=45W F=1MHZ 3En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 25 A 70 mOhms - 20 V, 20 V 1.5 V 60 nC - 55 C + 150 C 45 W Enhancement MOSVII Tube
Toshiba MOSFET N-Ch MOS 2A 650V 30W 380pF 3.26 262En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 2 A 3.26 Ohms - 30 V, 30 V 2.4 V 9 nC - 55 C + 150 C 30 W Enhancement MOSVII Tube
Toshiba MOSFET N-ch 600V 2.5A 30w 2.8 Ohm 51En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 2.5 A 2.8 Ohms - 30 V, 30 V 2.4 V 9 nC - 55 C + 150 C 30 W Enhancement MOSVII Tube
Toshiba MOSFET N-Ch MOS 3A 650V 35W 540pF 2.25 Ohm 145En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 3 A 2.25 Ohms - 30 V, 30 V 2.4 V 11 nC - 55 C + 150 C 35 W Enhancement MOSVII Tube
Toshiba MOSFET N-Ch MOS 3A 500V 60W 280pF 3 Ohm 17En stock
Min. : 1
Mult. : 1
Bobine: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 3 A 3 Ohms - 30 V, 30 V 2.4 V 7 nC - 55 C + 150 C 60 W Enhancement MOSVII Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch MOS 4A 500V 30W 380pF 2.0 Ohm 325En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 500 V 4 A 2 Ohms 30 W MOSVII Tube
Toshiba MOSFET N-Ch MOS 3.7A 600V 80W 540pF 2.0 Ohm 56En stock
Min. : 1
Mult. : 1
Bobine: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 3.7 A 2 Ohms - 30 V, 30 V 4.4 V 11 nC + 150 C 80 W Enhancement MOSVII Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch MOS 5A 550V 35W 540pF 1.7 Ohm 250En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 550 V 5 A 1.7 Ohms 35 W MOSVII Tube
Toshiba MOSFET N-Ch FET 650V 2.6s IDSS 10 uA 1.2 Ohm 164En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 5 A 1.43 Ohms - 30 V, 30 V 2 V 16 nC - 55 C + 150 C 40 W Enhancement MOSVII Tube
Toshiba MOSFET TO220 800V 5A N-CH MOSFET 148En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 800 V 5 A 2.4 Ohms - 30 V, 30 V 2.5 V 20 nC - 55 C + 150 C 40 W Enhancement MOSVII Tube
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=40W F=1MHZ 156En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 4.5 A 3.1 Ohms - 30 V, 30 V 2.5 V 20 nC - 55 C + 150 C 40 W Enhancement MOSVII Tube
Toshiba MOSFET N-Ch MOS 5A 500V 80W 490pF 1.5 Ohm 853En stock
Min. : 1
Mult. : 1
Bobine: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 5 A 1.3 Ohms - 30 V, 30 V 4.4 V 11 nC - 55 C + 150 C 80 W Enhancement MOSVII Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm 149En stock
20017/04/2026 attendu
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 6 A 1.11 Ohms - 30 V, 30 V 2 V 20 nC - 55 C + 150 C 45 W Enhancement MOSVII Tube