Infineon Technologies OptiMOS™ 6 Power MOSFETs

Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next-generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilizes thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced RDS(ON) of 30% and are optimized for synchronous rectification. These MOSFETs are available in various voltage nodes, including 40V, 100V, 120V, 135V, 150V, and 200V.

Additionally, the devices have improved figure of merits (FOM - RDS(on) x Qg and Qgd) allowing designers to increase efficiency and reduce system cost. The OptiMOS 6 maintains the advantage outputting a higher power, where the RDS(on) losses are getting more dominant, leading to better performance throughout the whole operating range.

40V POWER MOSFETS

Infineon Technologies OptiMOS™ 6 40V Power MOSFETs are optimized for a variety of applications and circuits, including synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, quick chargers, and ORing circuits. In SMPS applications, OptiMOS 6 is the perfect solution for optimizing efficiency over a wide range of output power, avoiding the trade-off between low and high load conditions.

The OptiMOS 6 40V Power MOSFETs are available in two different packages, the SuperSO8 - 5mm x 6mm with RDS(on) ranging from 5.9mΩ down to 0.7mΩ, and the PQFN 3.3mm x 3.3mm with RDS(on) ranging from 6.3mΩ down to 1.8mΩ.

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80V Power MOSFETs

The OptiMOS™ 6 80V Power MOSFETs set industry benchmark performance with a wide portfolio offering, including PQFN 3.3mm x 3.3mm, SuperSO8, PQFN 5mm x 6mm Dual-Side Cooling, and PQFN 3.3mm x 3.3mm Source-Down. The 80V family is ideal for high switching frequency applications such as telecom, servers, and solar. The performance improvements of OptiMOS™ 6 80V also demonstrate benefits in battery management systems (BMS).

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100V Power MOSFETs

The OptiMOS™ 6 power MOSFET 100V family targets applications such as switch-mode power supply (SMPS), solar, power tools, and battery management systems. The enhanced performance yields efficiency improvement, allowing easier thermal design and less paralleling, reducing system costs.

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120V Power MOSFETs

Infineon Technologies OptiMOS™ 6 120V Power MOSFET family is suitable for hard- and soft-switching applications at high- and low-switching frequencies. These MOSFETs are available in both normal and logic levels. These devices can be used in various applications such as industrial power supplies, solar, power chargers, low-voltage drives, and power tools.

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135V POWER MOSFETS

Infineon OptiMOS 6 135V Power MOSFET targets high-power motor-drive applications such as LEVs, e-forklifts, power and gardening tools, and UPS, which predominantly use 72V and 84V batteries. This product family effectively bridges the gap between 120V and 150V MOSFETs and provides high performance with the lowest Rds(on), enabling efficient power handling and reduced power dissipation.

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150V Power MOSFETs

Infineon Technologies OptiMOS™ 6 150V Power MOSFETs feature industry-leading low RDS(on), improved switching performance, and excellent EMI behavior, which contribute to unparalleled efficiency, power density, and reliability. Applications include Light Electric Vehicles (LEV), motor control, power tools, energy storage systems, power conversion, industrial power supplies, server Power Supply Units (PSUs), telecommunication infrastructures, and photovoltaic applications.

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200V Power MOSFETs

Infineon Technologies OptiMOS™ 6 200V Power MOSFETs are N-channel MOSFETs available in PG-TO263-3, PG-TO220-3, and PG-HDSOP-16 packages. These MOSFETs feature excellent gate charge x RDS(on) product (FOM), very low reverse recovery charge (Qrr), low on‑resistance RDS(on), and improved capacitance linearity. The 200V variants address the need for high power density, high efficiency, and high reliability. Conduction and switching losses can be reduced without compromising EMI. The OptiMOS™ 6 200V MOSFETs are ideal for paralleling.

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Features

  • Compared to alternative products
    • RDS(on) reduced by 30%
    • Improved FOM Qg x RDS(on) by 29%
    • Improved FOM Qgd x RDS(on) by 46%
  • Optimized for synchronous rectification
  • Suited for ORing circuits
  • High system efficiency
  • Less paralleling required
  • High power dissipation with optimized thermal management
  • Very low voltage overshoot
  • High current rating
  • Optimized gate threshold
  • Low conduction and switching losses
  • MSL1 rated
  • Reduced need for a snubber circuit
  • System cost reduction
  • Package options
    • SuperSO8
    • PQFN 3.3mm x 3.3mm
  • Halogen-free and RoHS-compliant

Applications

  • SMPS
  • Servers
  • Telecom
  • Chargers
  • O-ring circuits
  • Solar
  • LEV
  • Motor drives
  • Multicopters
  • Wireless charging
  • Renewables
  • Battery-powered applications

Videos

Voltage Comparison

Chart - Infineon Technologies OptiMOS™ 6 Power MOSFETs

SYSTEM EFFICIENCY

Chart - Infineon Technologies OptiMOS™ 6 Power MOSFETs
Publié le: 2019-04-02 | Mis à jour le: 2025-12-10