STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Résultats: 17
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Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité.
Qté. RoHS Modèle de ECAO Technologie
Package/Boîte
Style de montage
Configuration
Collecteur - Tension de l'émetteur VCEO max.
Tension de saturation collecteur-émetteur
Tension de l'émetteur de porte max.
Courant collecteur continu de 25 C
Pd - Dissipation d’énergie
Température de fonctionnement min.
Température de fonctionnement max.
Série
Conditionnement
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 650 V, 120 A low loss
Fiche technique
380En stock
Min. : 1
Mult. : 1

Si Max247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 160 A 625 W - 55 C + 175 C STGYA120M65DF2 Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 650 V, 6 A low loss
Fiche technique
3 710En stock
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 2 500

Si DPAK-3 (TO-252-3) SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 12 A 88 W - 55 C + 175 C STGD6M65DF2 Reel, Cut Tape, MouseReel
STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss
Fiche technique
980En stock
Min. : 1
Mult. : 1

Si Through Hole Single 650 V 1.55 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGP30M65DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 6 A low loss
Fiche technique
Délai de livraison produit non stocké 15 Semaines
Min. : 1
Mult. : 1

Si TO-220-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 12 A 88 W - 55 C + 175 C STGP6M65DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 15 A low-loss M series IGBT in a D2PAK package
Fiche technique
1 457En stock
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 1 000

Si D2PAK-3 SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 30 A 136 W - 55 C + 175 C STGB15M65DF2 Reel, Cut Tape, MouseReel

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss
Fiche technique
2 128En stock
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 2 500

Si DPAK-3 (TO-252-3) SMD/SMT Single 650 V 1.6 V - 20 V, 20 V 8 A 68 W - 55 C + 175 C STGD4M65DF2 Reel, Cut Tape, MouseReel
STMicroelectronics IGBTs Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT
Fiche technique
54En stock
Min. : 1
Mult. : 1

- 20 V, 20 V HB2 Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss
Fiche technique
1 470En stock
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 1 000

Si SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGB30M65DF2 Reel, Cut Tape, MouseReel

STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 75 A low loss
Fiche technique
679En stock
Min. : 1
Mult. : 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 120 A 468 W - 55 C + 175 C STGW75M65DF2 Tube

STMicroelectronics IGBTs Trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads
Fiche technique
692En stock
Min. : 1
Mult. : 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 15 A low loss
Fiche technique
140En stock
Min. : 1
Mult. : 1

Si TO-220FP-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 30 A 31 W - 55 C + 175 C STGF15M65DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss
Fiche technique
1 131En stock
Min. : 1
Mult. : 1

Si TO-220FP-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 60 A 38 W - 55 C + 175 C STGF30M65DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 10 A low loss
Fiche technique
447En stock
2 00009/11/2026 attendu
Min. : 1
Mult. : 1

Si STGP10M65DF2 Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
Fiche technique
344En stock
Min. : 1
Mult. : 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 75 A low loss
Fiche technique
39626/03/2026 attendu
Min. : 1
Mult. : 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 120 A 488 W - 55 C + 175 C STGWA75M65DF2 Tube

STMicroelectronics IGBTs Trench gate field-stop 650 V, 10 A low-loss M series IGBT in a D2PAK package
Fiche technique
Délai de livraison produit non stocké 15 Semaines
MouseReel disponible
Min. : 1
Mult. : 1
Bobine: 1 000

Si STGB10M65DF2 Reel, Cut Tape, MouseReel

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss
Fiche technique
Délai de livraison produit non stocké 15 Semaines
Min. : 2 000
Mult. : 1 000
Bobine: 1 000

Si D2PAK-3 SMD/SMT Single 650 V 1.6 V - 20 V, 20 V 8 A 68 W - 55 C + 175 C STGB4M65DF2 Reel