DTMOSIV MOSFET

Résultats: 112
Sélectionner Image Référence Fab. Description Fiche technique Disponibilité Prix (EUR) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité. Qté. RoHS Modèle de ECAO Technologie Style de montage Package/Boîte Polarité du transistor Nombre de canaux Vds - Tension de rupture drain-source Id - Courant continu de fuite Rds On - Résistance drain-source Vgs - Tension grille-source Vgs th - Tension de seuil grille-source Qg - Charge de grille Température de fonctionnement min. Température de fonctionnement max. Pd - Dissipation d’énergie Mode canal Nom commercial Conditionnement
Toshiba MOSFET Power MOSFET N-Channel 2 567En stock
Min. : 1
Mult. : 1
Bobine: 2 500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 20 A 156 mOhms - 30 V, 30 V 3 V 55 nC - 55 C + 150 C 156 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET Power MOSFET N-Channel 7 464En stock
Min. : 1
Mult. : 1
Bobine: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 5.8 A 890 mOhms - 30 V, 30 V 2.5 V 11 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC 5 745En stock
Min. : 1
Mult. : 1
Bobine: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 6.2 A 820 mOhms - 30 V, 30 V 2.7 V 12 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch 800V 1400pF 23nC 11.5A 45W 2 476En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 11.5 A 380 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR DPAK(OS) PD=130W F=1MHZ 991En stock
Min. : 1
Mult. : 1
Bobine: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 15.8 A 230 mOhms - 30 V, 30 V 3 V 43 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET Power MOSFET N-Channel 1 657En stock
Min. : 1
Mult. : 1
Bobine: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 8 A 440 mOhms - 30 V, 30 V 3 V 22 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel

Toshiba MOSFET MOSFET NChannel 068ohm DTMOS 20En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 35 A 68 mOhms - 30 V, 30 V 3.5 V 100 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFET MOSFET NCh trr100 nsn 0.25ohm DTMOS 47En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 13.7 A 250 mOhms - 30 V, 30 V 4.5 V 40 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube

Toshiba MOSFET Power MOSFET N-Channel 34En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 17.3 A 170 mOhms - 30 V, 30 V 2.5 V 45 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube
Toshiba MOSFET Power MOSFET N-Channel 192En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 8 A 440 mOhms - 30 V, 30 V 3 V 22 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ 551En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6.5 A 950 mOhms - 20 V, 20 V 3 V 13 nC - 55 C + 150 C 35 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 9.7A 80W FET 600V 700pF 20nC 449En stock
Min. : 1
Mult. : 1
Bobine: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 9.7 A 380 mOhms - 30 V, 30 V 3.7 V 20 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR DPAK(OS) PD=80W F=1MHZ 1 788En stock
Min. : 1
Mult. : 1
Bobine: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 7.8 A 670 mOhms - 30 V, 30 V 2.5 V 16 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR DTMOS DFN 8?8-OS PD=139W F=1MHZ 2 495En stock
Min. : 1
Mult. : 1
Bobine: 2 500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 15.8 A 245 mOhms - 30 V, 30 V 3 V 43 nC - 55 C + 150 C 139 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET DTMOSIV 600V 340mOhm 115A 100W 890pF 25nC 757En stock
Min. : 1
Mult. : 1
Bobine: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 11.5 A 340 mOhms - 30 V, 30 V 3.7 V 25 nC - 55 C + 150 C 100 W DTMOSIV Reel, Cut Tape, MouseReel

Toshiba MOSFET Power MOSFET N-Channel 4 415En stock
Min. : 1
Mult. : 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38.8 A 62 mOhms - 30 V, 30 V 3 V 135 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFET DTMOSIV 600V 18mOhm 100A 800W 15000pF 74En stock
Min. : 1
Mult. : 1

Si Through Hole TO-3PL-3 N-Channel 1 Channel 600 V 100 A 15 mOhms - 30 V, 30 V 3.7 V 360 nC - 55 C + 150 C 797 W Enhancement DTMOSIV Tube
Toshiba MOSFET Power MOSFET N-Channel 1 288En stock
Min. : 1
Mult. : 1
Bobine: 1 000

Si Through Hole TO-262-3 N-Channel 1 Channel 650 V 13.7 A 220 mOhms - 30 V, 30 V 2.5 V 35 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch DTMOSIV 600V 240W 3000pF 30.8A 1 587En stock
2 25010/02/2026 attendu
Min. : 1
Mult. : 1
Bobine: 2 500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 30.8 A 87 mOhms - 30 V, 30 V 3 V 105 nC + 150 C 240 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET Power MOSFET N-Channel 257En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9.7 A 350 mOhms - 30 V, 30 V 3 V 25 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 600V 9.7A 30W DTMOSIV 700pF 20nC 79En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9.7 A 327 mOhms - 30 V, 30 V 3.7 V 20 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 800V 1150pF 19nC 9.5A 40W 188En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 9.5 A 460 mOhms - 20 V, 20 V 3 V 19 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC 61En stock
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9.7 A 380 mOhms - 30 V, 30 V 3.7 V 20 nC - 55 C + 150 C 100 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch DTMOSIV 600 V 80W 700pF 20nC 9.7A 150En stock
Min. : 1
Mult. : 1

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 9.7 A 327 mOhms - 30 V, 30 V 3.7 V 20 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Tube
Toshiba MOSFET MOSFET NChannel 0.33ohm DTMOS 53En stock
25017/04/2026 attendu
Min. : 1
Mult. : 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 11.1 A 330 mOhms - 30 V, 30 V 3.5 V 25 nC - 55 C + 150 C 35 W Enhancement DTMOSIV Tube